首页|Micro-LED芯片激光去除机理及工艺参数优化

Micro-LED芯片激光去除机理及工艺参数优化

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为提高面板级Micro-LED显示面板的制造质量,需要对不良Micro-LED芯片进行原位去除与修复,利用COM-SOL建立激光双温烧蚀模型,开展了Micro-LED不良芯片激光去除机理和工艺参数的优化。通过单脉冲激光对Micro-LED芯片烧蚀所形成表面光斑的直径平方来推算Micro-LED的烧蚀阈值,拟合出激光参数与烧蚀深度的关系,并对双温烧蚀模型的准确性进行验证;分析了激光光斑重叠率、能量密度和不同扫描路径下对应芯片的烧蚀特征及去除机理,结合双温烧蚀模型完成了激光扫描路径及对应工艺参数的优化。结果表明,飞秒激光烧蚀模型对Micro-LED芯片激光烧蚀加工的最大分析误差为9。28%,优化的激光去除模式实现了1秒/颗的快速精准剥离和焊盘表面的高质量整平修复,对大幅面Micro-LED显示面板规模化生产中不良芯片的快速修复具有重要的指导作用。
Mechanism for laser-induced damage bad chip of Micro-LED and optimization of processing parameters
To improve the manufacturing quality of Micro-LED display panels,it is crucial to perform in-situ removal and repair of defective chips.This study introduces a laser two-temperature ablation model de-veloped with COMSOL to explore the mechanisms and process parameters for eliminating defective chips using a laser.Initially,the ablation threshold of the Micro-LED was identified by measuring the square di-ameter of the surface spot created by a single-pulse laser ablation.A fitting analysis was then carried out to determine the relationship between laser parameters and ablation depth,confirming the accuracy of the two-temperature ablation model.An extensive analysis was also conducted to examine the laser spot over-lap rate,laser fluence,ablation characteristics,and removal mechanisms for different scanning paths on the affected chips.Utilizing the two-temperature ablation model,the laser scanning path and process pa-rameters were optimized.The findings reveal that the femtosecond laser ablation model for Micro-LED has a maximum analytical error of 9.28%.The optimized laser removal method allows for rapid and pre-cise removal at a rate of 1 s/chip,while ensuring high-quality repair of pad surfaces.This provides essen-tial guidance for efficient repair processes in large-scale production environments of large-format Micro-LED display panels.

femtosecond laserin-situ removalMicro-LEDbad chips

乔健、吴振铎、彭信翰、冉雨宣、杨景卫

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佛山科学技术学院 广东省工业智能检测技术重点实验室,广东 佛山 528000

季华实验室,广东 佛山 528200

深圳市海目星激光智能装备股份有限公司,广东 深圳 518000

飞秒激光 原位去除 微发光二极管显示器 不良芯片

深圳市科技计划广东省重点建设学科科研能力提升项目

KJZD202310230923020062022ZDJS042

2024

光学精密工程
中国科学院长春光学精密机械与物理研究所 中国仪器仪表学会

光学精密工程

CSTPCD北大核心
影响因子:2.059
ISSN:1004-924X
年,卷(期):2024.32(9)