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微型阵列束闸设计与实验

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微型阵列束闸是多束电子束曝光系统的关键部件,用于控制多束电子束的开/关,实现复杂图形的快速曝光。对3×3微型阵列束闸进行了设计与制作,并进行了多束电子束偏转实验研究。对阵列束闸结构进行了优化设计,并基于MEMS加工工艺成功制备了阵列束闸。针对阵列束闸的控制要求,设计了可单独控制的阵列束闸控制器。将控制器与阵列束闸进行连接,验证了控制器的偏转速度与功能完整性。最后,在多束电子束测试平台对阵列束闸进行了偏转实验,研究串扰对电子束偏转的影响。实验结果表明:阵列束闸控制器的偏转速度达到43。5MHz,大于设计值10MHz;阵列束闸成功实现了单独控制电子束开和关,束闸的偏转距离在25~30μm之间,小于计算值43。29μm;串扰程度均小于3%。该阵列束闸已经具备多束电子束开/关控制功能,但在偏转精度,设计和加工工艺等方面还需进一步优化和完善。
Design and experiment of micro-arrayed beam blanker
The micro-arrayed beam blanker is essential for the multi-beam electron beam lithography sys-tem,enabling the rapid exposure of complex graphics by controlling the electron beam's opening and clos-ing. In this study,a 3×3 micro-arrayed beam blanker was designed and fabricated,followed by an experi-ment on multi-beam electron beam deflection. Based on prior optimization,the structural design and MEMS-based processing technology were developed,resulting in successful fabrication of the beam blank-er. A controller capable of independently managing the multi-beam was then created and connected to the beam blanker to validate its deflection speed and functionality. The deflection experiment conducted on a multi-beam test platform examined crosstalk effects. Results indicate that the controller's deflection speed reaches 43.5 MHz,exceeding the design target of 10 MHz. The beam blanker independently opens and closes the electron beam,with a deflection range of 25-30 μm,which is below the predicted 43.29 μm. Crosstalk levels were all under 3%. While the designed micro-arrayed beam blanker effectively controls the multi-beam electron beam,further optimization is needed for deflection accuracy and processing tech-nology.

electron beam lithographyarrayed beam blankermulti-beam electron beamcrosstalkdeflection speed

张利新、孙博彤、刘星云、殷伯华、刘俊标、韩立

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中国科学院电工研究所微纳加工技术与智能电气设备研究部,北京 100190

中国科学院大学电子电气与通信工程学院,北京 100049

电子束曝光 阵列束闸 多束电子束 串扰 偏转速度

国家自然科学基金青年基金中国科学院科研仪器设备研制项目

62101528GJJ-STD20200003

2024

光学精密工程
中国科学院长春光学精密机械与物理研究所 中国仪器仪表学会

光学精密工程

CSTPCD北大核心
影响因子:2.059
ISSN:1004-924X
年,卷(期):2024.32(13)
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