Design and Fabrication of High Speed LNOI Phase Modulator
Aiming at the microwave photonic system's demand for on-chip high-speed modulation devices,based on the linear electro-optic effect of lithium niobate materials,this research carried out the optoelectronic co-simulation design of on-chip devices and used the semiconductor device preparation method compatible with the CMOS process.On-chip optoelectronic devices such as low-loss lithium niobate waveguide,high-efficiency coupling mode spot converter,and high-frequency microwave signal transmission line are integrated on the lithium niobate(LNOI)wafer on the insulator to realize the on-chip integration of the modulator chip.The coupling process using micro-optics realized the optical signal input and output of the optical fiber array on the chip;the impedance matching of the chip-thin film resistor-RF joint and the low-loss transmission of electrical signals were realized by wire bonding;Hermetic packaging was used to improve the reliability and environmental adaptability of the modulator.The test showed that the optical power insertion loss of the device is＜6.5 dB,the modulation bandwidth is＞15 G(@3 dB),and the dynamic half-wave voltage is＜6 V(@10 GHz),meeting the application requirements of photoelectric oscillators and other related microwave photonic devices.
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