锂掺杂对氧化铜薄膜光电性能的影响
Effect of Li Doping on the Properties of CuO Films Deposited by Pulse Laser Deposition
向玉春 1朱建雷 1刘晓静2
作者信息
- 1. 咸阳职业技术学院,陕西咸阳 712000
- 2. 陕西科技大学,陕西西安 710000
- 折叠
摘要
通过脉冲激光沉积的方法在玻璃衬底上制备Li掺杂的CuO薄膜,并研究了Li掺杂对CuO薄膜结构及性能的影响.Li掺杂浓度从 0 wt%增加到 2 wt%时CuO薄膜的结晶性变好,再由 2 wt%增加到 3 wt%时结晶性变差;在掺杂了Li之后,载流子浓度提高了至少 3个数量级,并且呈现出先增大后减小的趋势,迁移率的变化正好与之相反.当掺杂浓度为 2 wt%时,载流子浓度达到最大,为 1.10×1019 cm-3,电阻率低至 76 Ω·cm.这主要是由于不同浓度Li掺杂时,Li原子进入CuO不同的晶格位置造成的.通过Li掺杂,CuO薄膜光电性能有了一定改善,为下一步研究CuO薄膜太阳能电池提供了理论指导.
Abstract
Li doped CuO films are prepared on glass substrate by pulsed laser deposition,and the effect of Li doping on the structure and properties of CuO films is studied.The crystallinity of CuO films becomes better when Li doping concentration increases from 0 wt%to 2 wt%,and then becomes worse when Li doping concentration increases from 2 wt%to 3 wt%.After doping Li,the carrier concentration increases by at least three orders of magnitude,and it shows a trend of first increasing and then decreasing.The change of mobility is just the opposite.When the doping concentration is 2 wt%,the carrier concentration reaches the maximum,which is 1.10×1019 cm-3,and the resistivity is as low as 76 Ω·cm.This is mainly due to the fact that Li atoms enter different lattice positions of CuO when doped with different concentrations of Li.The electrical and optical properties of CuO thin films doped with Li have been improved to some extent,which provides theoretical guidance for further research of CuO thin film solar cells.
关键词
脉冲激光沉积/氧化铜/Li掺杂/导电类型/电阻率Key words
pulse laser deposition/CuO/Li doping/conduction type/electrical resistivity引用本文复制引用
基金项目
陕西省自然科学基础研究计划(2022JQ416)
咸阳职业技术学院2024年度科研基金(2024KJC04)
出版年
2024
NETL
NSTL
万方数据