首页|自组装纳米结构阵列光电探测器的制备与研究

自组装纳米结构阵列光电探测器的制备与研究

扫码查看
为了避免耗时长、设备昂贵、步骤复杂的传统光刻技术,解决微电子制造领域"卡脖子"的技术难题,提出了利用液面自组装聚苯乙烯(PS)纳米球制备纳米结构阵列.成功在n型硅衬底上制备了成本低廉、大面积、尺寸可控的纳米结构阵列,并将纳米结构阵列成功应用于光电探测器.研究表明:纳米结构的引入可以有效提高硅表面的抗反射性能,与平面硅相比反射率最多降低约 96%.纳米结构器件的光/暗电流比接近一个数量级.在+5V偏压处,365 nm和 405 nm波长处纳米结构的响应度相较于平板结构的分别提升了 10.1 倍和 3.7倍.在+5V偏压处,纳米结构在 365 nm波长处的外量子效率(External Quantum Efficiency,EQE)比平板结构的高 10.1 倍,405 nm波长处高 3.7 倍.这为制备高性能纳米结构光电器件提供了一条低成本、高效和可靠简便的途径.
Preparation and Study of Self-Assembled Nanostructured Arrays Photodetector
In order to avoid the time-consuming,expensive equipment and complicated steps of traditional lithography and to solve the neck-pinching technical problems in the field of microelectronics fabrication,liquid-surface self-assembled polystyrene(PS)nanosphere is utilized to prepare nanostructured arrays in this paper.Low-cost,large-area,size-controllable nanostructured arrays on n-type silicon substrates are successfully prepared and successfully employed to photodetector.It is shown that the introduction of nanostructures can effectively improve the anti-reflective property of silicon surface,and the reflectivity is reduced by up to about 96%compared with that of planar silicon.The light/dark current ratio of the nanostructured device approximately reached one order of magnitude.At+5 V bias,the responsivity of the nanostructured photodetector is improved by 10.1-fold and 3.7-fold compared with that of the planar one at the wavelengths of 365 nm and 405 nm,respectively.At+5 V bias,the external quantum efficiency(EQE)of the nanostructured photodetector is 10.1 times higher than that of the planar one at 365 nm and 3.7 times higher at 405 nm.This provides a low-cost,efficient,reliable and simple way to prepare high-performance nanostructured optoelectronic devices.

self-assembledlow-costnanostructured arrayanti-reflectivephotodetector

张墨涵、水芙蓉、韦淑娟、覃祖彬、孙堂友、廖清

展开 >

桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林 541004

自组装 低成本 纳米阵列 抗反射 光电探测器

国家大学生创新创业训练计划

202210595017

2024

光学与光电技术
华中光电技术研究所 武汉光电国家实验室 湖北省光学学会

光学与光电技术

CSTPCD
影响因子:0.351
ISSN:1672-3392
年,卷(期):2024.22(5)
  • 4