钨镍共掺杂V2O5薄膜的光电特性研究
Preparation of tungsten-nickel co-doped V2O5 films by sol-gel method and photoelectric properties of thermally induced phase transition
王兴萍 1李毅 2庄嘉庆 1闫俊屹 1梅金城1
作者信息
- 1. 上海理工大学 光电信息与计算机工程学院,上海 200093
- 2. 上海理工大学 光电信息与计算机工程学院,上海 200093;上海理工大学 上海市现代光学系统重点实验室,上海 200093
- 折叠
摘要
利用溶胶-凝胶旋涂法和后退火工艺在FTO导电玻璃上制备了钨镍共掺杂V2O5 薄膜,研究了薄膜在不同温度和不同偏压下的光电特性和相变特性.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱仪(XPS)测试了钨镍共掺杂V2O5 薄膜的晶体结构、表面形貌和组分,分析了不同钨镍共掺杂浓度对V2O5 薄膜相变光电特性的影响.结果表明,当钨和镍的掺杂质量分数分别为 3%和 1.5%时,钨镍共掺杂的V2O5 薄膜的相变温度为218.5℃,在可见光范围内有较高的透过率,在近红外 1310 nm波长处的光学透过率达48.83%,与未掺杂V2O5 薄膜的光学透过率相比提高了 10.29%,薄膜电阻降低了 30.53%,热致回线宽度收窄为 15℃,说明钨镍共掺杂的V2O5 薄膜具有良好的可逆相变光电特性,有望在新型光电器件领域得到较好的应用.
Abstract
In this paper,tungsten-nickel co-doped V2O5 films were prepared on FTO conductive glass by using sol-gel spin coating and annealing to study their photoelectric and phase transition properties at different temperatures and different bias voltage.The crystal structure,surface morphology and components of tungsten-nickel co-doping V2O5 films were tested by XRD,SEM and XPS to analyze the effects of different tungsten-nickel co-doping concentrations on the phase transition photoelectric properties of V2O5 films.The results show that when the doping concentrations of tungsten and nickel were respectively 3%and 1.5%,tungsten-nickel co-doped V2O5 films had a phase transition temperature of 218.5℃,a higher transmittance in the visible light range and the transmittance of 48.83%at 1310 nm wavelength.Comparing with the undoped V2O5 films,the optical transmittance and sheet resistance of the co-doped V2O5 films increased 10.29%and decreased 30.53%,respectively,and the thermal hysteresis loop width was also narrowed to 15℃.It is expected to have better applications in the field of new optoelectronic devices based on their excellent reversible phase transition photoelectric properties.
关键词
钨镍共掺杂/V2O5薄膜/溶胶-凝胶/热致相变/光学透过率/薄膜电阻Key words
codoping of tungsten and nickel/V2O5 film/sol-gel/thermotropic phase transition/optical transmittance/sheet resistance引用本文复制引用
基金项目
教育部科学技术研究重点项目(207033)
上海市科学技术委员会科技攻关计划(06DZ11415)
上海市教育委员会科研创新计划重点项目(10ZZ94)
上海市领军人才培养计划(2011-026)
出版年
2024
NETL
NSTL
万方数据