Preparation of tungsten-nickel co-doped V2O5 films by sol-gel method and photoelectric properties of thermally induced phase transition
In this paper,tungsten-nickel co-doped V2O5 films were prepared on FTO conductive glass by using sol-gel spin coating and annealing to study their photoelectric and phase transition properties at different temperatures and different bias voltage.The crystal structure,surface morphology and components of tungsten-nickel co-doping V2O5 films were tested by XRD,SEM and XPS to analyze the effects of different tungsten-nickel co-doping concentrations on the phase transition photoelectric properties of V2O5 films.The results show that when the doping concentrations of tungsten and nickel were respectively 3%and 1.5%,tungsten-nickel co-doped V2O5 films had a phase transition temperature of 218.5℃,a higher transmittance in the visible light range and the transmittance of 48.83%at 1310 nm wavelength.Comparing with the undoped V2O5 films,the optical transmittance and sheet resistance of the co-doped V2O5 films increased 10.29%and decreased 30.53%,respectively,and the thermal hysteresis loop width was also narrowed to 15℃.It is expected to have better applications in the field of new optoelectronic devices based on their excellent reversible phase transition photoelectric properties.
codoping of tungsten and nickelV2O5 filmsol-gelthermotropic phase transitionoptical transmittancesheet resistance