Hematite photoanode was modified via Zr doping to improve photoelectrochemical water split-ting efficiency.FeOOH precursor was synthesized by chemical bath method,followed by impregnation and high temperature annealing method to prepare Zr doped hematite phtoanode.The results of photoelectro-chemical tests reveal that the photocurrent density of the Zr doped hematite photoanode is significantly increased compared with that of the pure hematite photoanode.The improvement of the photocurrent density is due to the enhanced charge separation and injection efficiency.The study of photoelectrochemical impedance spectroscopy further demonstrates that Zr doping can effectively reduce the surface charge recombination rate krec.Therefore,Zr doping can passivate the surface states existing in the surface of hematite photoanode,which will reduce the surface recombination of photogenerated charges and promote the separation of photogenerated charges.
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