基于优化算法实现准N-bit智能超表面中低副瓣电平的设计
Low Sidelobe Level in Quasi N-bit Intelligent Metasurfaces Based on Optimization Algorithms
周明杰 1扆梓轩 1苏婉婉 1张传胜1
作者信息
- 1. 上海大学特种光纤与光接入网重点实验室,上海 200444
- 折叠
摘要
在相控阵天线阵列以及可重构智能超表面中,由于模拟的补偿相位难以实现,因此当前大多都采用数字量化相位的方式来实现补偿相位,但是要想实现更好的性能,需要每个单元上使用更多的二极管.分析并提出了一种准N-bit的设计方法,每个单元使用一个二极管来实现 180°相位切换,并通过粒子群优化算法,优化单元预相位分布的位置,来实现接近精确补偿相位的副瓣性能.仿真结果表明,在 10×10 的阵列中,使用准 3-bit的方案依然能够实现低于-10 dB的副瓣指标.
Abstract
In phased array antenna arrays and reconfigurable intelligent metasurfaces,due to the difficulty in achieving simulated compensation phase,most current methods use digital quantization phase to achieve compensation phase.How-ever,to achieve better performance,more diodes need to be used on each unit.This paper analyzes and proposes a quasi N-bit design method,where each unit uses a diode to achieve 180° phase switching.Through particle swarm opti-mization algorithm,the position of the unit's pre-phase distribution is optimized to achieve near accurate compensation phase sidelobe performance.The simulation results show that in a 10×10 array,the quasi 3-bit scheme can still achieve sidelobe indicators below-10 dB.
关键词
相控阵/超表面/副瓣电平/粒子群优化Key words
phased array/metasurface/sidelobe level/particle swarm optimization引用本文复制引用
出版年
2024
NETL
NSTL
万方数据