Effect of B4C on Resistance to Temperature Dependent Oxidation of SiC Materials Combined with Multiphase Nitrides
Composite nitride bonded SiC materials with B4C addition amounts of 0(numbered 0#)and 0.5w％(numbered B#)were prepared.The material was kept in an air atmosphere at 600,800,1 000,1 200,1 400,and 1 550 ℃ for 5 hours,and the changes in porosity,mass change rate,volume change rate,phase composition,and microstructure were studied after four repeated oxidation cycles at 1 550 ℃.The results showed that adding 0.5w％B4C to the composite nitride bonded SiC material can significantly reduce its mass change rate after oxidation at 1 200℃and its volume change rate after oxidation at 800 ℃.
dry quenching furnaceB4Cmuliphase nitridesSiCtemperature dependent oxidationramp area
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