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延期状态下电子雷管电子控制模块的高过载加载实验

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为探究电子雷管内的电子控制模块在延期状态下受冲击载荷时的失效机制,采用分离式霍普金森压杆(split Hopkinson pressure bar,SHPB)对电子雷管试件进行了高过载加载测试,得到了整体电子控制模块和分离出钽电容的其余电子控制模块受不同加载压力时的失效情况.结果显示:钽电容在 1.495×105g过载时出现电压下降现象,且过载越大,短路失效情况越明显;在一定过载范围内,钽电容因其特有的自愈性,可在短时间内回到起始量级;当过载超过临界范围,达到 3.848×105g时,钽电容损坏且无法逆转.模块内其余组件的抗过载能力强于电容,芯片在 4.155×105g过载后检测异常,电阻元件失效发生在 4.249×105g以上过载.
Experimental Study on High Overload Loading of Electronic Control Module inside Electronic Detonator under Delayed State
In order to explore the failure mechanism of the electronic control module inside the electronic detonator under impact load during the postponement state,a split Hopkinson pressure bar(SHPB)experiment was conducted on the electronic detonator specimens under high overload loading.The failure conditions of the overall electronic control module and the remaining electronic control modules separated from the tantalum capacitors were obtained under different levels of loading experiments.The results indicate that the tantalum capacitor exhibited a voltage drop phenomenon at an overload of 1.495×105g,with a more pronounced short-circuit failure as the overload increased.Within a certain overload range,the tantalum capacitor᾽s unique self-healing properties allow it to return to its initial level rapidly.However,when the overload exceeded the critical threshold of 3.848×105g,the tantalum capacitor was irreversibly damaged.The overload resistance of other components within the module is stronger than that of the capacitor.The chip detected an anomaly after an overload of 4.155×105g,while the failure of the resistor components occurs at an overload of over 4.249×105g.

electronic detonatorselectronic control modulesplit Hopkinson pressure barhigh overloadfailure

叶紫阳、吴红波、杨仕春、黄菓树、李天浩、孙翼、马成帅、任梦雨

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安徽理工大学化工与爆破学院,安徽 淮南 232001

安徽江南化工股份有限公司,安徽 合肥 230031

无锡盛景微电子股份有限公司,江苏 无锡 214000

安徽中金立华矿业工程有限公司,安徽 安庆 246003

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电子雷管 电子控制模块 分离式霍普金森压杆 高过载 失效

2025

高压物理学报
中国物理学会 高压物理专业委员会 四川省物理学会

高压物理学报

北大核心
影响因子:0.276
ISSN:1000-5773
年,卷(期):2025.39(1)