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近红外光谱-补水技术法测定半导体用高浓度混酸含量

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本研究创新性地采用补水技术,结合近红外光谱法快速测定半导体刻蚀工艺使用的高浓度混酸中各组分的含量,在1 min之内即可完成一个样品的检测并同时给出各组分的含量结果。实验通过在高浓度混酸样品中加入适量的超纯水来显著降低样品的腐蚀性,确保样品装入光学玻璃指管中在1 min之内不发生明显的腐蚀反应,即玻璃样品管中因强烈腐蚀而产生连续性的大量气泡。加入的超纯水不参与任何计算,也不影响各组分的计算结果。该实验方案巧妙的利用了补水技术,适用于高浓度混酸样品的检测。
Determination of High Concentration Mixed Acids of Semiconductor by Near Infrared Spectroscopy Combined with Water Replenishment Technique
The innovative technique of Water Replenishment was combined with near infrared spectroscopy(NIR)for the rapid determination of the content of each component in the high concentration mixed acids used in the semiconductor etching process,and the determination of one sample can be completed within 1 min and the results of the content of each component can be given at the same time.The experiment significantly reduced the corrosiveness of the sample by adding an appropriate amount of ultrapure water to the high concentration mixed acid samples,ensuring that the sample was loaded into an optical glass tube within 1 min without a significant corrosion reaction,i.e.,a large number of continuous bubbles in the glass tube due to the strong corrosion.The added ultrapure water was not involved in any calculations and does not affect the results of the components.This solution cleverly utilized the water replenishment technique and was suitable for the detection of high concentration mixed acid samples.

high concentration mixed acidsNIRwater replenishment technique

陈达、霍世欣

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瑞士万通中国有限公司,上海 200335

高浓度混酸 近红外 补水技术

2025

广州化工
广州市化工行业协会 广州市化学化工学会 广州市化学工业研究所

广州化工

影响因子:0.358
ISSN:1001-9677
年,卷(期):2025.53(1)