广州化工2025,Vol.53Issue(1) :208-211.DOI:10.20220/j.cnki.1001-9677.2025.01.058

《半导体器件与集成电路设计基础》课程实践教学改革——场效应管中Si纳米线湿法腐蚀

Practical Teaching Reform on Semiconductor Device and Fundamentals of Integrated Circuit Design:Wet Etching of Si Nanowires in FETs

张杰 范瑜
广州化工2025,Vol.53Issue(1) :208-211.DOI:10.20220/j.cnki.1001-9677.2025.01.058

《半导体器件与集成电路设计基础》课程实践教学改革——场效应管中Si纳米线湿法腐蚀

Practical Teaching Reform on Semiconductor Device and Fundamentals of Integrated Circuit Design:Wet Etching of Si Nanowires in FETs

张杰 1范瑜1
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作者信息

  • 1. 常熟理工学院电子信息工程学院,江苏 常熟 215500
  • 折叠

摘要

硅湿法腐蚀工艺作为硅基集成电路制造中最基础、最关键技术之一,已被广泛地应用于实际生产中.利用硅各向异性湿法腐蚀,我们设计制作了场效应管中Si纳米线沟道.该实践教学覆盖了《半导体器件与集成电路设计基础》课程中多个重要知识点,包含MOSFET器件、薄膜淀积、光刻、干法刻蚀及湿法腐蚀等内容.理论与实践彼此相互促进的整合教学模式,能加深学生对专业理论知识的理解,培养学生工程实践能力,同时帮助学生了解科学前沿,激发其科研兴趣.

Abstract

As one of the most fundamental and key technologies in the manufacture of silicon-based integrated circuits(IC),silicon wet etching process has been widely used in practical production.Si nanowire channel in the field-effect transistor(FET)was designed and fabricated by using the anisotropic wet etching of silicon.The practical teaching covered many important knowledge points from the course of Semiconductor Device and Fundamentals of Integrated Circuit Design,including MOSFET devices,thin film deposition,lithography,dry etching and wet etching,and so on.The integrated teaching mode in which theory and practice promoted each other can deepen students'understanding of professional theoretical knowledge,improve students'engineering practice ability,and help students understand the frontier of science and then stimulate their interest in scientific research.

关键词

半导体器件/集成电路制造工艺/实践课程/场效应管/硅湿法腐蚀

Key words

semiconductor devices/IC manufacturing process/practice curricula/FETs/silicon wet etching

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出版年

2025
广州化工
广州市化工行业协会 广州市化学化工学会 广州市化学工业研究所

广州化工

影响因子:0.358
ISSN:1001-9677
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