AlGaN/GaN/AlGaN双异质结构双极特性的研究
Bipolar Properties of AlGaN/GaN/AlGaN Double Heterostructures
韩铁成 1彭晓灿2
作者信息
- 1. 北华航天工业学院 电子与控制工程学院,河北廊坊 065000
- 2. 北华航天工业学院遥感信息工程学院,河北廊坊 065000
- 折叠
摘要
通过一维薛定谔-泊松方程自洽仿真,研究了AlGaN缓冲层组分(0～0.08)和GaN沟道层(20,50和80nm)对AlGaN/GaN/AlGaN双异质结构能带和载流子分布的影响.缓冲层Al组分的增加可有效抬高沟道层背部的势垒,从而提高2DEG的限域性.随着GaN沟道层厚度增加,GaN沟道层/AlGaN缓冲层界面(底部界面)的势垒高度会增加.当沟道层厚度达到50nm后,在缓冲层Al组分为0.08的情况下,该异质结构会在底部界面附近诱导出2DHG,出现"双极特性".一旦2DHG形成,缓冲层Al组分的持续增加将导致更高密度的2DHG,而对能带、2DEG限域性和2DEG密度的影响变得不明显.
Abstract
The effects of Al-content in AlGaN buffer(0-0.08)and GaN channel(20,50 and 80 nm)on the energy-band and carrier distribution of AlGaN/GaN/AlGaN double heterostructures are investigated by one-dimensional Schrodinger-Poisson self-consistent simulations.As the Al-content of the buffer increases,the potential barrier at the back of the channel is effectively raised,thus improving the 2DEG confinement.As the thickness of the GaN channel increases,the barrier height at the GaN channel/AlGaN buffer interface(bottom interface)increases.When the channel thickness reaches 50 nm,the heterostructure induces 2DHG near the bottom interface at an Al-content of 0.08 for the buffer,appearing"bipolar characteristic".Once the 2DHG is formed,the continued increase in the Al-content of the buffer leads to a higher density of 2DHG,while the effects on the energy-band,2DEG confinement and 2DEG density become insignificant.
关键词
AlGaN/GaN/AlGaN/二维电子气/AlGaN缓冲层/二维空穴气Key words
AlGaN/GaN/AlGaN/two-dimension electron gas/AlGaN buffer/two-dimension hole gas引用本文复制引用
基金项目
北华航天工业学院博士基金项目(BKY-2021-16)
出版年
2024
NETL
NSTL
万方数据