Structural,Optical and Electrical Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition
In order to investigate the effects of doping content and film thickness on the properties of GaxZn1-xO thin films,a series of GaxZn1-xO thin films were prepared by pulsed laser deposition on MgO substrates.The X-ray diffraction results showed that all the films grew along the z-axis optimally,and the crystalline.The quality and transmittance decreased with the increasing of the doping content.The best electrical properties were obtained for the films with 3%Ga doping content.The crystalline quality of the films increased with the increase of thickness,and the lowest resistivity of 1.34×10-4 Ω·cm corresponding to the highest mobility of 26.48 cm2/Vs were obtained at 250 nm.The optical transmittance in the visible range of the films with different thicknesses of the 3%component was higher than 80%.All the results indicate that GaxZn1-xO films are good candidates for replacing conventional indium tin oxides.
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