脉冲激光沉积法制备Ga掺杂ZnO薄膜结构、光学和电学性能研究
Structural,Optical and Electrical Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition
周同 1杨晓漫 1刘亲壮1
作者信息
- 1. 淮北师范大学 物理与电子信息学院,安徽 淮北 235000
- 折叠
摘要
为探究掺杂含量及薄膜厚度对GaxZn1-xO薄膜各性能的影响,利用脉冲激光沉积法在MgO衬底上制备一系列GaxZn1-xO薄膜.X射线衍射结果表明,所有薄膜均沿z轴择优生长,结晶质量和透光率随掺杂含量的增加而降低.Ga掺杂含量为3%的薄膜获得最佳电学性能.薄膜结晶质量随厚度增加而提高,在250 nm获得最低电阻率1.34×10-4 Ω·cm和最高迁移率26.48 cm2/Vs.3%组分不同厚度的薄膜可见光范围内光透过率均高于80%.GaxZn1-xO薄膜是替代传统铟锡氧化物的良好候选材料.
Abstract
In order to investigate the effects of doping content and film thickness on the properties of GaxZn1-xO thin films,a series of GaxZn1-xO thin films were prepared by pulsed laser deposition on MgO substrates.The X-ray diffraction results showed that all the films grew along the z-axis optimally,and the crystalline.The quality and transmittance decreased with the increasing of the doping content.The best electrical properties were obtained for the films with 3%Ga doping content.The crystalline quality of the films increased with the increase of thickness,and the lowest resistivity of 1.34×10-4 Ω·cm corresponding to the highest mobility of 26.48 cm2/Vs were obtained at 250 nm.The optical transmittance in the visible range of the films with different thicknesses of the 3%component was higher than 80%.All the results indicate that GaxZn1-xO films are good candidates for replacing conventional indium tin oxides.
关键词
脉冲激光沉积/GaxZn1-xO薄膜/电学性能/X射线衍射Key words
pulsed laser deposition/GaxZn1-xO films/electrical properties/X-ray diffraction引用本文复制引用
出版年
2024
NETL
NSTL
万方数据