The development of radiation hardened motor drivers requires accurate acquisition of the total ionizing dose effect failure threshold of MOSFET devices used in the bridge circuits.However,the offline irradiation testing methods such as current-voltage measurement and capacitance-voltage measurement,which can not truly reflect the continuous changes in device switching performance during irradiation.Therefore,in response to the online testing requirements for the total dose effect of MOSFET devices,a universal testing system based on high-speed signal acquisition and storage was designed,which has functions such as sample driving,high-frequency signal acquisition,high-speed data storage,and data bad block management.A total ionizing dose effect test was conducted using typical commercial MOSFETs.The results showed that when the absorbed dose reached 598.08±41.54 Gy(Si),the square wave waveform of samples changed significantly,in which the low level voltage rising to 0.82 V,and high level remained normal.As the absorbed dose increases,the low-level voltage continuously increases to 0.82 V and further increases to 1.08 V and 2.4 V,while the switch function remained normal.When the absorbed dose reaches 1775.41±219.68 Gy(Si),the collected waveform jumps to a straight line of 2.93 V,with no square wave signal output.It is believed that the MOSFET switch function is completely damaged.
关键词
N型MOSFET/总剂量效应/失效阈值/测试系统
Key words
N-type MOSFET/total ionizing dose effect/failure threshold/testing system
维普
万方数据