BiCuTeO has garnered significant attention as a promising P-type thermoelectric material in recent years.In this study,c-axis inclined BiCuTeO thin films were prepared on LaAlO3 single crystal substrates using the pulsed laser deposition technique.The influence of deposition temperature on the crystal structure and surface topography was studied,and the light induced transverse thermoelectric effect of the films was investigated.The film grown at 380 ℃ exhibited superior crystal quality.Upon the irradiation of a 308 nm pulsed laser,voltage signals with a sensitivity of 9.5 V/mJ and a rise time of 68 ns were detected.Importantly,this sensitivity surpasses that of BiCuSeO and several other materials studied in terms of transverse thermoelectric effect,thereby highlighting the substantial potential of this film for high-sensitivity and fast-response pulsed light detection applications.
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