哈尔滨理工大学学报2024,Vol.29Issue(3) :134-140.DOI:10.15938/j.jhust.2024.03.016

第一性原理计算Sn掺杂钛酸钡陶瓷的压电性能

First-principles Calculation and Analysis of Piezoelectric Properties of Sn-doped Barium Titanate Ceramics

王婉茹 李彩霞 马晓轩 李成龙 计楠 李天奇
哈尔滨理工大学学报2024,Vol.29Issue(3) :134-140.DOI:10.15938/j.jhust.2024.03.016

第一性原理计算Sn掺杂钛酸钡陶瓷的压电性能

First-principles Calculation and Analysis of Piezoelectric Properties of Sn-doped Barium Titanate Ceramics

王婉茹 1李彩霞 1马晓轩 2李成龙 1计楠 1李天奇1
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作者信息

  • 1. 哈尔滨理工大学 理学院,哈尔滨 150080
  • 2. 德州学院 能源与机械学院,山东 德州 253025
  • 折叠

摘要

为了探究Sn掺杂钛酸钡无铅压电陶瓷的微观结构和宏观电学性能的调控机理.采用第一性原理的密度泛函理论方法计算了锡钛酸钡陶瓷(BaTi1-xSnxO3,简写为BTSx,x=0,0.125,0.20,0.25,0.33 和0.50)的能带结构、态密度和压电性能,研究了其压电性调控机理.研究发现:钛酸钡陶瓷的带隙宽度为 1.780 eV,在所研究的组分范围内,随着Sn掺杂量的增加,BTSx陶瓷样品的带隙宽度单调减小.其态密度图谱表明原子之间的轨道杂化使压电性更稳定,钛酸钡陶瓷中B位Sn掺杂使其室温压电性能增强.

Abstract

To explore the regulation mechanism of microstructure and macroscopic electrical properties of Sn doped BaTiO3 lead-free piezoelectric ceramics.Based on density functional theory,the band structure,state density and piezoelectric properties of BaTi1-x SnxO3 ceramics(abbreviated as BTSx,x=0,0.125,0.20,0.25,0.33 and 0.50)were calculated by first-principles,and the piezoelectric regulation mechanism was analyzed.The results show that the band gap width of BaTiO3 ceramics is 1.780 eV,It is found that in the range of the studied components,with the increase of Sn doping,the band gap width of BTSx samples decreases monotonically,the densities of states show that the hybridization between atoms makes the piezoelectric property more stable,and the B-site Sn doping enhances the room temperature piezoelectric performance of the sample.

关键词

第一性原理/BaTiO3陶瓷/电子结构/压电性

Key words

first-principles/BaTiO3 ceramics/electronic structure/piezoelectricity

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基金项目

黑龙江省自然科学基金面上项目(E2016041)

出版年

2024
哈尔滨理工大学学报
哈尔滨理工大学

哈尔滨理工大学学报

CSTPCD北大核心
影响因子:0.508
ISSN:1007-2683
参考文献量5
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