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一种基于MIPI D-PHY物理层的高速比较器

A high-speed comparator based on MIPI D-PHY physical layer

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基于MIPI D-PHY物理层传输协议,文章设计一种高速低功耗的自偏置比较器电路,并对电路进行理论分析和仿真验证.该高速比较器总体结构由二级运放构成:共栅极和共源极以及工作在线性区的NMOS管组成第1级放大结构;电流源作负载的四管运放组成第2级放大结构.差分信号通过NMOS源极进行输入,提升信号的共模电压接收范围.电路结构中无额外电流源偏置,提高数据传输速率的同时减小了功耗.基于SMIC 0.18 μm CMOS工艺设计,采用1.8 V电压供电,仿真结果表明:高速比较器能准确接收低共模电平的差分信号,直流增益为37.4 dB,传输速率达到2.5 Gb/s,功耗达到326 μW/(Gb/s),可以接收到差分信号的共模电平范围为30~330 mV.
Based on the MIPI D-PHY physical layer transmission protocol,a high-speed and low-power self-bi-ased comparator circuit is designed,and the circuit is theoretically analyzed and simulated.The overall struc-ture of comparator is composed of two stages of op-amps:the common gate,the common source and the NMOS transistor working in the linear region form the first-stage amplification structure,and the op-amp with the current source as the load forms the second-stage amplification structure.The differential signal is in-put through the NMOS source,which improves the common-mode voltage receiving range of the signal.There is no additional current source bias in the circuit structure,which improves the data transmission rate and reduces power consumption.The circuit is designed based on SMIC 0.18 μm CMOS process,powered by 1.8 V voltage.Simulation results show that the high-speed comparator can accurately receive differential sig-nals with low common-mode voltage,the DC gain is 37.4 dB,and the transmission rate reaches 2.5 Gb/s;the power consumption is 326 μW/(Gb/s);the common-mode voltage range of the received differential signal reaches 30-330 mV.

mobile industry processor interface(MIPI)high-speed receiving circuitMIPI D-PHY physical layerCMOS image sensorhigh-speed comparator

张欣瑶、黄尊恺、汪辉、田犁、汪宁、封松林

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中国科学院上海高等研究院,上海 201210

中国科学院大学集成电路学院,北京 100049

移动产业处理器接口(MIPI) 高速接收电路 MIPI D-PHY物理层 CMOS图像传感器 高速比较器

国家重点研发计划国家自然科学基金

2021YFB220630262004201

2024

合肥工业大学学报(自然科学版)
合肥工业大学

合肥工业大学学报(自然科学版)

CSTPCD北大核心
影响因子:0.608
ISSN:1003-5060
年,卷(期):2024.47(3)
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