In this paper,graphene oxide(GO)films were synthesized from natural flake graphite by modified Hummers method,and then nitrogen ions implantation and annealing were combined to pre-pare nitrogen-doped reduced graphene oxide(NrGO)films.The effects of nitrogen ions implantation on the surface morphology and microstructure of graphene-based films were investigated by scanning electron microscope(SEM),X-ray diffraction(XRD),Raman spectroscopy and X-ray photoelectron spectroscopy(XPS)characterization.The results showed that under the bombardment of nitrogen i-ons,carbon atoms were lost and nitrogen atoms were substituted for doping.Atoms migration and re-arrangement on the surface of graphene-based films led to the formation of nitrogen doping and nanoscale pores on the surface layers of NrGO films.The nitrogen doping content in the surface layers of nitrogen-doped graphene oxide(NGO)films was up to 10.86％,and after annealing the nitrogen content in the surface layers of NrGO films was also up to 9.90％.In addition,I-V tests found that nitrogen ions implantation and thermal treatment also had a significant effect on the electrical trans-port property of the graphene-based films.
graphene-based filmsnitrogen dopingions implantationsurface modificationelectrical transport property
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