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一种高电源抑制比快速启动的带隙基准的设计

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文章采用5 V、0.35μm CMOS工艺,设计一种适用于低噪声高速系统的带隙基准电压源电路.为了保证电路具有较高的电源抑制比(power supply rejection ratio,PSRR),设计一种抑制电源电压波动的负反馈回路,并且在电路中采用具有较高增益的两级放大器结构.针对某些系统快速启动的需求,设计快速启动电路,当电源上电时启动电路直接作用于基准电压,加速带隙基准电路的启动,在电路正常启动后通过开关管使启动电路停止工作.仿真结果表明,温度在-40~125 ℃范围内,带隙基准的温漂系数为13.05 × 10-6 ℃-1;低频时 PSRR 为 100.6 dB;线性调整率(line regulation,LNR)为 0.024 mV/V;启动时间为 4 μs.
Design of a fast start-up bandgap voltage reference with high PSRR
Based on 5 V 0.35 μm CMOS process,this paper proposes a bandgap voltage reference cir-cuit suitable for low-noise and high-speed systems.In order to ensure that the circuit has a higher power supply rejection ratio(PSRR),a negative feedback loop is designed to suppress the fluctuation of the power supply,and a two-stage amplifier structure with higher gain is used in the circuit.A fast start-up circuit is designed to meet the requirements of some high-speed systems for the start-up se-quence.When the power supply starts to be turned on,the fast start-up circuit directly acts on the reference voltage,which accelerates the start-up of the bandgap reference.After the bandgap voltage reference is normally started,the start-up circuit stops working by turning off the transistors quickly.According to the simulation results,the proposed bandgap voltage reference has a temperature drift coefficient of 13.05 × 10-6 ℃-1 between-40 ℃ and 125 ℃ and the PSRR at low frequency is 100.6 dB.In addition,its line regulation(LNR)and starting time are 0.024 mV/V and 4 μs,respec-tively.

power supply rejection ratio(PSRR)fast start-upbandgap voltage referencenegative feedback looptemperature drift coefficientline regulation(LNR)

吴宏元、张章、程威、马永波

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合肥工业大学微电子学院,安徽合肥 230601

电源抑制比(PSRR) 快速启动 带隙基准 负反馈回路 温漂系数 线性调整率(LNR)

国家自然科学基金区域创新发展联合基金资助项目

U19A2053

2024

合肥工业大学学报(自然科学版)
合肥工业大学

合肥工业大学学报(自然科学版)

CSTPCD北大核心
影响因子:0.608
ISSN:1003-5060
年,卷(期):2024.47(6)
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