Resistive switching behavior of memristors based on WS2 nanosheets and polyvinylcarbazole nanocomposites
In this paper,Ag/WS2-PVK/Cu memristors based on monolayer WS2 nanosheets and polyvi-nylcarbazole(PVK)nanomaterials were reported,and the influence of PVK mass fraction on Ⅰ-Ⅴ char-acteristics of memristors was studied.The results indicate that the Ag/WS2-PVK/Cu memristors show write-once read-many-times(WORM)memory behavior.With the increase of PVK mass frac-tion,VSET increases gradually,and the switch ratio decreases after a slight increase.The Ⅰ-Ⅴ double logarithmic curve confirms that the switching mechanism of the device is a trap-controlled space charge limited current(TCSCLC)mechanism,which is explained by the energy band diagram.The research results provide a theoretical basis for the design and optimization of the switching performance of tran-sition metal dichalcogenides(TMDs)memristors.