首页|基于WS2纳米片和聚乙烯咔唑纳米复合材料的忆阻器的阻变行为

基于WS2纳米片和聚乙烯咔唑纳米复合材料的忆阻器的阻变行为

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文章介绍基于单层WS2纳米片和聚乙烯咔唑(PVK)纳米材料的Ag/WS2-PVK/Cu忆阻器,并研究PVK质量分数对忆阻器Ⅰ-Ⅴ特性的影响.Ag/WS2-PVK/Cu忆阻器表现为一次写入多次读取(write-once read-many-times,WORM)的阻变行为,随着PVK质量分数的增加,VSET逐渐增加,开关比略有增加然后减小.Ⅰ-Ⅴ双对数曲线证实了器件的开关机制是陷阱控制的空间电荷限制电流机制,并用能带图进行了解释,研究结果为过渡金属硫化物忆阻器开关性能的设计和优化提供了理论依据.
Resistive switching behavior of memristors based on WS2 nanosheets and polyvinylcarbazole nanocomposites
In this paper,Ag/WS2-PVK/Cu memristors based on monolayer WS2 nanosheets and polyvi-nylcarbazole(PVK)nanomaterials were reported,and the influence of PVK mass fraction on Ⅰ-Ⅴ char-acteristics of memristors was studied.The results indicate that the Ag/WS2-PVK/Cu memristors show write-once read-many-times(WORM)memory behavior.With the increase of PVK mass frac-tion,VSET increases gradually,and the switch ratio decreases after a slight increase.The Ⅰ-Ⅴ double logarithmic curve confirms that the switching mechanism of the device is a trap-controlled space charge limited current(TCSCLC)mechanism,which is explained by the energy band diagram.The research results provide a theoretical basis for the design and optimization of the switching performance of tran-sition metal dichalcogenides(TMDs)memristors.

memristorWS2 nanosheetsresistive switching behaviorpolyvinylcarbazole(PVK)pol-ymer nanocomposites

邹鹏飞、曹青、阳芳、熊礼苗、袁旭东

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合肥工业大学机械工程学院,安徽 合肥 230009

合肥通用机械研究院压缩机技术国家重点实验室,安徽 合肥 230031

忆阻器 WS2纳米片 阻变行为 聚乙烯咔唑(PVK) 聚合物纳米复合材料

2024

合肥工业大学学报(自然科学版)
合肥工业大学

合肥工业大学学报(自然科学版)

CSTPCD北大核心
影响因子:0.608
ISSN:1003-5060
年,卷(期):2024.47(12)