电子级多晶硅生产中间产品氯硅烷中痕量磷含量检测方法进展
Progress in the Determination of Trace Phosphorus Content in the Intermediate Product Chlorosilane Produced from Electronic Grade Polysilicon
杨晓青 1薛心禄 2岳峥 1李蔚1
作者信息
- 1. 青海芯测科技有限公司,青海 西宁 810000
- 2. 青海芯测科技有限公司,青海 西宁 810000;青海新能源材料与储能技术重点实验室,青海 西宁 810000
- 折叠
摘要
采用改良西门子法在生产电子级多晶硅过程中,精馏中间产物氯硅烷通入多晶硅还原炉,通过氢气还原氯硅烷生产多晶硅,其中氯硅烷中存在的各种形式的磷作为施主杂质,对电子级多晶硅产品质量影响重大.文章系统阐述电子级多晶硅生产中间产品氯硅烷中痕量磷含量的检测方法及研究进展,通过比较各种氯硅烷中痕量磷含量杂质检测方法的优缺点,以供日常检测参考.
Abstract
In the process of producing electronic grade polysilicon by modified Siemens process,the intermediate products of rectification are fed into a polysilicon reduction furnace to produce polysilicon by hydrogen reduction of chlorosilane,Various forms of phosphorus in chlorosilane as donor impurities have great influence on the quality of electronic grade polysilicon products.This paper systematically expounds the detection methods and research progress of trace phosphorus content in chlorosilane,an intermediate product of electronic grade polysilicon production,and compares the advantages and disadvantages of various impurity detection methods of trace phosphorus content in chlorosilane to provide reference for daily detection.
关键词
磷化氢/磷/氯硅烷/多晶硅Key words
phosphine/phosphorus/chlorosilane/polycrystalline silicon引用本文复制引用
出版年
2024
NETL
NSTL
维普
万方数据