火工品2025,Issue(1) :7-12.DOI:10.3969/j.issn.1003-1480.2025.01.002

基于半导体桥芯片的钝感高瞬发底火设计

Design on An Insensitive High-instantaneous Primer Based on Semiconductor Bridge Chip

牛惠媛 任炜 褚恩义 李慧 常英珂 金豪杰
火工品2025,Issue(1) :7-12.DOI:10.3969/j.issn.1003-1480.2025.01.002

基于半导体桥芯片的钝感高瞬发底火设计

Design on An Insensitive High-instantaneous Primer Based on Semiconductor Bridge Chip

牛惠媛 1任炜 1褚恩义 1李慧 2常英珂 1金豪杰1
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作者信息

  • 1. 陕西应用物理化学研究所 瞬态化学效应与控制全国重点实验室,陕西 西安,710061
  • 2. 陕西应用物理化学研究所 瞬态化学效应与控制全国重点实验室,陕西 西安,710061;杭州电子科技大学 微电子研究院,浙江 杭州,310018
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摘要

针对超高速射武器弹药对高频高安全及高一致性点火的发展需求,基于半导体桥芯片点火技术,设计了一种新型钝感高瞬发底火.通过对比研究4种半导体桥芯片及其2种封装结构,选用斯蒂芬酸铅和亚铁氢化铅/高氯酸钾作为两级复合装药,优化形成了模块化结构的半导体桥底火样机.该底火满足了与弹药接口的匹配要求,并达到1A1W5 min不发火的安全性要求.发火性能试验表明,所研制的半导体桥底火作用时间不大于200µs,散布不大于30µs,与传统桥丝电底火相比瞬发度和作用时间一致性显著提高,综合性能更好.

Abstract

Aiming at the development demands of high-frequency,high-safety and high-consistency ignition for ultra-high-speed weapons ammunition,a new type of insensitive high-transient primer was designed based on semiconductor bridge chip ignition technology.By comparing 4 kinds of semiconductor bridge chip and 2 kinds of packaging structure,and selecting two-stage composite charge composed of lead Stephen acid and lead azide/potassium perchlorate,the semiconductor bridge primer prototype with modular structure was optimized.The primer meets the safety requirements of non-ignition under 1 A 1 W 5 min condition and the match requirement with the ammunition interface.The firing property test results show that the action time of semiconductor bridge primer is not longer than 200µs and the dispersion is not greater than 30µs,compared with the traditional bridge wire electric primer,the instantaneousness and consistency of action time are significantly improved,and the comprehensive performance is better.

关键词

底火/半导体桥/模块化设计/高瞬发/高安全

Key words

Primer/Semiconductor bridge chip/Modular design/High instantaneous/High safety

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出版年

2025
火工品
中国兵器工业第213研究所 应用物理化学国家级重点实验室

火工品

北大核心
影响因子:0.329
ISSN:1003-1480
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