Recent advances in the removal of trace boron and phosphorus impurities from electronic grade silicon raw materials
The content of trace boron and phosphorus impurities in trichlorosilane and hydrogen is the main factor affecting the quality of polysilicon.Improving the removal efficiency of boron and phosphorus impurities is crucial for the large-scale production of electronic-grade polysilicon,which is essential for advancing China's energy and information industries.This paper provides a summary of the research progress on removing boron and phosphorus impurities in SiHCl3 and H2,and highlights the characteristics of various purification methods.The coupled reaction-adsorption-rectification technology,which combines the advantages of rectification and chemical purification,is the most promising method for purifying SiHCl3.The adsorption method,known for its high sensitivity to boron and phosphorus impurities,is the most commonly used method for purifying H2.Finally,the thesis systematically discusses the structural characteristics of adsorbents and their relationship with adsorption performance.It also summarizes the challenges and development direction of removing boron and phosphorus impurities from polysilicon raw materials.
boron and phosphorus impuritiesadsorptiondistillationreactive rectificationtrichlorosilanehydrogen
万方数据
维普
