Electronic-grade deuterium gas is of paramount importance in the integrated circuit industry during the high-temperature annealing process,the purity standard for deuterium gas reaches as high as 6N in the 7 nm and even more advanced processes.In this study,a comprehensive technological process for the electrolytic preparation and purification of 6N deuterium gas was proposed,including:(1)designing FeNi@ClBC as a highly efficient OER catalysts,surpassing the performance of the commercial catalyst(RuO2),enhancing the catalytic efficiency while reducing the overall energy consumption;(2)introducing a gas stripping method using electrolytic anode oxygen to remove impurities such as nitrogen from heavy water,and by reducing impurities in heavy water,the purification difficulty of deuterium is significantly diminished;(3)proposing in-depth oxygen and moisture removal processes,screening the optimal catalyst and molecular sieve for the adsorption of oxygen and moisture,and the process parameters are optimized to achieve target oxygen and moisture contents(volume fraction)below 1×10-8 and 1.65×10-7,respectively.The ultra-high-purity deuterium gas product index obtained in the experiment reached 6N,which meets the manufacturing needs of advanced process integrated circuits and provides a reference for the low-cost production of ultra-high-purity deuterium gas.
维普
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