首页|新型锑氧簇光刻胶的性能与机理研究

新型锑氧簇光刻胶的性能与机理研究

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随着半导体行业集成度越来越高,对光刻材料提出了更高的要求.近年来,金属氧簇光刻胶由于尺寸小、结构设计灵活,得到了广泛的研究.目前锑基金属光刻胶仅局限于含锑配合物.开发出新型锑氧簇光刻胶,通过对比金属有机组装Sb4O-1与自组装Sb4O-2的溶解度差异说明自组装策略优势.原子力显微镜证实Sb4O-2光刻胶可形成光滑薄膜,并获得低粗糙度值(均方根粗糙度＜0.3 nm).电子束光刻(EBL)证明Sb4O-2光刻胶优异的图案化能力(线宽＜50 nm),理论计算支持X射线光电子能谱(XPS)分析的新型自组装Sb4O-2"配体解离"机制.
Performance and mechanism of novel antimony oxo cluster photoresist
With the increasing integration of semiconductor industry,higher requirements are put forward for lithographic materials.In recent years,metal-oxygen oxo clusters(MOCs)photoresists have been widely studied due to the small size and flexible structure design.At present,antimony-based photoresistsare limited to antimony-containing complexes.In this paper,a novel antimony-oxygen oxo cluster photoresist was developed,and the advantages of the self-assembly strategy was demonstrated by comparing the solubility difference between metal-organic assembled Sb4O-1 and self-assembled Sb4O-2.Atomic force microscopy(AFM)confirmed that Sb4O-2 photoresists can form smooth films with a low roughness value(root mean square roughness＜0.3 nm).Electron beam lithography(EBL)demonstrated the excellent patterning ability of Sb4O-2 photoresist(line width＜50 nm),and theoretical calculations supported a novel self-assembled Sb4O-2"ligand dissociation"mechanism analyzed by X-ray photoelectron spectroscopy(XPS).This work inspired the exploration of additional metal oxygen oxo cluster materials.

antimony oxo clusterself-assemblyphotoresisttheoretical calculationselectron beam lithographyimagingsolubilitynanomaterials

司友明、郑凌峰、陈鹏忠、樊江莉、彭孝军

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大连理工大学智能材料化工前沿科学中心,精细化工国家重点实验室,辽宁 大连 116024

锑氧簇 自组装 光刻胶 理论计算 电子束光刻 成像 溶解性 纳米材料

国家自然科学基金国家自然科学基金辽宁滨海实验室项目中央高校基本科研业务费专项

2192580222338005LBLB-2023-03DUT22LAB601

2024

10.11949/0438-1157.20231414

化工学报
中国化工学会 化学工业出版社

化工学报

CSTPCD北大核心
影响因子：1.26
ISSN：0438-1157
年,卷(期)：2024.75(4)
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