环境技术2024,Vol.42Issue(7) :188-194.

双极晶体管空间辐射效应的研究进展

Advance in Space Radiation Effects of Bipolar Transistors

韩星 王永琴 曾娅秋 刘宇 粟嘉伟 林珑君
环境技术2024,Vol.42Issue(7) :188-194.

双极晶体管空间辐射效应的研究进展

Advance in Space Radiation Effects of Bipolar Transistors

韩星 1王永琴 1曾娅秋 1刘宇 1粟嘉伟 1林珑君1
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作者信息

  • 1. 中国电子科技集团公司第二十四研究所,重庆 400060
  • 折叠

摘要

双极晶体管具有电流驱动能力强、噪声低、线性度高等优点,已成为航天飞行器中常用的电子元器件.然而,在空间辐射环境下服役时,双极晶体管容易发生性能退化,进而危及航天设备的运行.因此,本文综述了双极晶体管在空间辐射环境中产生的损伤效应,主要包含电离损伤效应、位移损伤效应以及电离/位移损伤协同效应,并分析了双极晶体管的性能退化规律以及损伤机理,从而为双极晶体管的抗辐射研究提供一定的参考.

Abstract

Bipolar transistor has become the electronic component commonly used in aerospace vehicles due to their good current driving ability,low noise,good linearity and excellent matching characteristics.However,the bipolar transistor is prone to performance degradation in space radiation environment,further endangering the operation of the space equipment.In the work,the radiation damage effects of the bipolar transistor in space environment are summarized,including ionization damage,displacement damage and the irradiation synergistic effects of ionization damage and displacement damage.In the meanwhile,the performance degradation law and the damage mechanism of the bipolar transistor are analyzed.It can provide a reference for the long-term development of radiation resistance technology of bipolar transistor.

关键词

双极晶体管/总剂量电离辐射效应/位移损伤效应/低剂量率增强效应/电离/位移协同效应

Key words

bipolar transistor/total ionizing dose effect/displacement damage effect/enhanced low dose rate sensitivity/ionization/displacement synergistic effect

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基金项目

重庆市自然科学基金面上项目(CSTB2022NSCQ-MSX1631)

出版年

2024
环境技术
广州电器科学研究院有限公司

环境技术

CSTPCD
影响因子:0.995
ISSN:1004-7204
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