SiC MOSFET在车载逆变、充电设备上应用前景广阔,随着国家能源战略的转型升级,其市场规模有望进一步扩展.栅氧可靠性是SiC MOSFET最受关注的问题之一,但传统试验方法在应用于新产品时面临有效性低、时效性差的问题,本文讨论了 3 种可用于栅氧可靠性快速评估的试验方法,总结了不同方法的试验原理、典型试验现象,讨论了各方法的适用性,介绍了包括阈值电压、栅极漏电流的特征参数退化现象和提取方法.
Abstract
SiC MOSFET has broad application prospects in vehicle inverter and charging equipment.With the transformation and upgrading of national energy strategy,the market size of SiC MOSFET is expected to further expand.Gate oxygen reliability is one of the most concerned issues for SiC MOSFETs.Traditional testing methods face low effectiveness and poor timeliness when applied to new process products.In this paper,Three testing methods using for rapid evaluation of gate oxygen reliability were discussed.And the testing principles and typical phenomena of different methods were summarized.The applicability and the degradation phenomenon of each method were explained in detail.Finally,the extraction method of characteristic parameters including threshold voltage and gate leakage current were also introduced.
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