首页|Failure mechanisms of AlGaN/GaN HEMTs irradiated by high-energy heavy ions with and without bias

Failure mechanisms of AlGaN/GaN HEMTs irradiated by high-energy heavy ions with and without bias

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Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radia-tion damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown volt-age,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer.Moreover,a new type of N2 bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N2 bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.

GaN HEMTsHeavy ionsSingle-event burnoutLatent tracksDegradation

Pei-Pei Hu、Li-Jun Xu、Sheng-Xia Zhang、Peng-Fei Zhai、Ling Lv、Xiao-Yu Yan、Zong-Zhen Li、Yan-Rong Cao、Xue-Feng Zheng、Jian Zeng、Yuan He、Jie Liu

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Institute of Modern Physics,Chinese Academy of Sciences(CAS),Lanzhou 730000,China

Key Laboratory of Wide Band-gap Semiconductor Materials,Ministry of Education,Xidian University,Xi'an 710071,China

University of Chinese Academy of Sciences(UCAS),Beijing 100049,China

2025

核技术(英文版)
中国科学院上海应用物理研究所,中国核学会

核技术(英文版)

影响因子:0.667
ISSN:1001-8042
年,卷(期):2025.36(1)