磷化铟(InP)基高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)凭借高频、高增益、低噪声等特性,广泛应用于卫星、载人航天、深空探测等空间通信系统中,但空间环境中的电子、质子、中子等高能粒子会影响InP基HEMT性能,降低空间通信系统的可靠性.该文主要论述高能粒子辐射诱导缺陷对InP基HEMT器件直流(Direct Current,DC)特性、射频(Radio Frequency,RF)特性、跨导和扭结效应(Kink effect)的影响和退化机理,接着总结并分析了InP基HEMT抗辐射加固措施方面的研究进展.通过系统总结国内外InP基HEMT辐照效应研究进展,以期为研究InP基HEMT辐照效应损伤机制以及改进其抗辐射加固技术提供有价值的参考.最后,基于目前InP基HEMT辐照效应研究中仍存在的问题,提出了该器件抗辐射加固未来可重点关注的研究方向.
Research progress on irradiation effect of InP-based high electron mobility transistors
Indium phosphide(InP)-based high electron mobility transistors(HEMTs)have been widely adopted in space communication systems such as satellites,manned spaceflight,and deep space exploration due to their high frequency and gain,and low noise.However,high-energy particles such as protons,electrons,and neutrons in a space environment affect the performance of InP-based HEMTs and reduce the reliability of space communication systems.This paper mainly discusses the influence and degradation mechanism of defects induced by high-energy particle irradiation on the direct current(DC)and radio frequency(RF)performance of InP-based HEMTs,as well as the transconductance and kink effect in the irradiation environment.Subsequently,the research progress of radiation-hardening measures for InP-based HEMT devices is summarized and analyzed so as to provide the theoretical guidance for studying damage mechanism of InP based HEMT irradiation effect and improving its radiation-hardening technology.Finally,based on current challenges in the field,future research directions are proposed for radiation effects and radiation-hardening technologies of InP-based HEMTs.
Indium phosphideHigh electron mobility transistorIrradiation effectsRadiation-induced defectsRadiation hardening
NETL
NSTL
万方数据
