首页|不同结构及新型材料在硅基光电探测器上的应用展望

不同结构及新型材料在硅基光电探测器上的应用展望

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  • 国家科技期刊平台
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硅基光电探测器是硅光子集成电路中的核心器件,在导弹制导系统中起着高效探测目标并精确跟踪目标的关键作用.本文综述了国内外关于硅基光电探测器的研究进展和应用前景,并探讨了不同结构和材料对探测器性能的影响.通过回顾相关文献并分析研究成果,重点关注了PIN结构、肖特基结构、GeSn材料和二维材料在硅基光电探测器中的应用情况.随着研究的深入,硅基光电探测器的响应速度和灵敏度得到了显著提高,并且实现了对从紫外波段到红外波段宽范围内的探测需求,旨在提高硅基光电探测器的响应度、缩短响应时间和降低暗电流的同时,探索新的结构和材料,以进一步拓展硅基光电探测器在红外成像和光通信系统等领域的应用范围.
Application Prospects of Different Structures and New Materials in Silicon Based Photodetectors
Silicon based photodetector is the core device in silicon photonic integrated circuit,which plays a key role in efficient target detection and accurate target tracking in missile guidance system.This paper summarizes the re-search progress and application prospects of silicon based photodetector at home and abroad,and discusses the impact of different structures and materials on the detector performance.By reviewing relevant literatures and analyzing re-search results,it emphasis on the application of PIN structures,Schottky structures,GeSn materials,and two-dimen-sional materials in silicon-based photodetectors.With further research,the response speed and sensitivity of silicon-based photodetectors have been significantly improved,and the detection demand for a wide range from ultraviolet to in-frared has been achieved to improve the responsiveness of silicon based photodetectors,shorten the response time and reduce the dark current,also explore new structures and materials to further expand the application range of silicon-based photodetectors in infrared imaging and optical communication systems.

silicon basesilicon photonicssilicon photonic devicephotodetectormissile guidanceinfrared imaging

李浩杰、冯松、胡祥建、后林军、欧阳杰、郭少凯

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西安工程大学,西安 710000

硅基 硅光子学 硅光子器件 光电探测器 导弹制导 红外成像

国家自然科学基金国家重点实验室开放基金陕西省重点研发计划陕西省重点研发计划西安市科技计划

61204080SKL2018042022GY-0122020KW-0112020KJRC0026

2024

10.12132/ISSN.1673-5048.2023.0092

航空兵器
中国空空导弹研究院

航空兵器

CSTPCD北大核心
影响因子：0.453
ISSN：1673-5048
年,卷(期)：2024.31(1)
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