摘要
存储器是系统级芯片(System on chip,SoC)中最重要的组成部分之一,也是最容易出现故障的部件.存储器故障可能会导致整个SoC失效,对存储器进行充分的测试和验证是至关重要的.目前,主流的存储器测试方法是采用存储器内建自测试(Memory build-in-self test,MBIST)技术,传统的可测性技术采用单一的测试算法进行测试,为了满足不同类型存储器的测试需求以及不同工艺制造阶段的测试强度,需要使用不同类型的测试算法进行测试.结合存储器常见的故障模型以及多种测试算法,设计了具有较高灵活性和可扩展性的可编程存储器内建自测试(Programmable memory built-in-self test,PMBIST)电路,可兼容四种不同的March系列算法进行存储器内建自测试,采用寄存器传输语言(Reigster transfer language,RTL)级代码的编写方式,针对静态随机存储器(Static random-access memory,SRAM)采用不同March系列测试算法进行仿真,并以常用的March C+算法为例进行说明.仿真结果表明,所设计的PMBIST电路可对四种不同的March算法进行测试,满足不同类型存储器的内建自测试需求.
Abstract
Memory is one of the most critical components of System-on-chip(SoC),and it is also a component prone to failure.Since memory failure may lead to the error of the SoC,it is essential to test and verify the memory adequately.At present,the mainstream memory testing method is Memory built-in-self test(MBIST)technology.Only a single test algorithm can be used for testing by traditional testability technology.To satisfy the testing requirements of various types of memory and different stages of process manufacturing,diverse types of test algorithms are needed.A programmable memory built-in self-test(PMBIST)circuit with high flexibility and scalability is designed based on memory fault models and various test algorithms.The PMBIST is compatible with four different March algorithms,and Reigster transfer language level code has been developed.Simulation was conducted using different March series test algorithms for Static random-access memory(SRAM),and March C+algorithm was used as an example.The simulation results demonstrate that the designed PMBIST circuit in this paper can be tested with four different March algorithms,thereby accommodating the built-in self-test requirements of various types of memory.
维普
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