Effect of Au-NPs on the Interfacial Modi-fication of Niobium Oxide Memrist-ors
In the resistive-variable device,by spin-coating a layer of gold nanopartic-les(Au-NPs)be tween the niobium oxide film and the bottom electrode as an interfacial modification layer,the threshold volt age of the niobium oxide memristor can be significant-ly reduced,and the centralisation of the distribution of the threshold voltage can be impr-oved.Through scanning electron microscopy,it was found that the Au-NPs spin-coated on top of the bottom electrode had a more uniform distribution,which was conducive to the for mation of conductive filaments in the device at fixed positions such as Au-NPs,thus r-educing the possibility of the random formation of conductive filaments.The I-V cycling t-est confirmed that the introduction of the Au-NPs significantly enhanced the transport cha-racteristics of the space-charge-limited currents,which was shown to be conducive to the growth of the fixed conductive filaments,and enhance the device stability.
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