Modulation Effect of High Laser Field on Low Dimensional Semiconductor System
The interaction between intense laser field and material is a phenomenon which is a research hotspot in the field of nonlinear optics.Since the advent of lasers,there have been a lot of studies on the nonlinear optical properties of a specific material structure under a specific laser field,but there are few studies on the relationship between the material structure and the value of laser parameters.In this paper,the modulation range of laser field on the optical properties of semiconductor materials is studied,and it is found that with the increase of laser correction parameters,the peak position of light absorption and light re fraction occurs redshift.
high laser fieldsemiconductor materiallight absorption coefficientrefractive index change
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