Study on preparation and properties of electrodeposited copper indium sulfur thin films
With the depletion of fossil energy,the development of energy-saving materials in the petrochemical industry is the trend.In this paper,the copper indium sulfur(CIS)absorption layer of solar cell was deposited by one-step electrodeposition method in sodium citrate system,and then the film was heat treated.The effects of CuSO4 concentration,In2(SO4)3 concentration,Na2S2O3 concentration,sodium citrate concentration,heat treatment temperature,pH and gelatin content on the properties of CuInS2 films were investigated.The thin film and ZnS were assembled into CuInS2 thin film solar cells.The photoelectric conversion performance was measured by I-V method,the semiconductor type was measured by hot and cold probe method,the band gap width was measured by ultraviolet spectrophotometer,and the surface morphology of the film was measured by atomic force microscope.The optimal CuInS2(CIS)film obtained by adjusting the electrolyte ratio and heat treatment temperature had a uniform surface and a band gap of 1.59 eV,which is the closest to the theoretical value.The semiconductor type is P-type,and the slope deviation of the I-V curve of the battery was 112.20%under light and cassette conditions.
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