Design of Fully Integrated RF Power Amplifier Based on SiGe BiCMOS
A compact fully integrated power amplifier for mobile devices based on the SiGe BiCMOS process is proposed.The design uses a cascode driver stage cascaded with a common emitter power stage to increase the power gain of the amplifier,integrates a CMOS power supply on-chip to provide bias current,and uses distributed ballast resistors and a bias circuit with thermal negative feedback effect to compensate the junction temperature so as to prevent amplifier failure at high-temperature operation.A compact circuit-level thermal coupling model is used to simulate and verify the proposed thermal stabilization measures.The post-simulation results show that PA has an output gain of 32.5 dB in the working range of 2.4～2.5 GHz under a 3.3 V power supply,S11&S22<-10 dB,and the output power at the 1 dB compression point is 25.4 dBm.The maximum junction temperature is less than 65℃(saturation).The chip area is only 1.25×0.76 mm2.The test results show that in the working environment of-45～85℃,the amplifier can work well in the application where the gain requirement is 26.5～32.9 dB.The output power at the 1 dB compression point is 24.3 dBm.Using a 20 MHz 64-QAM OFDM modulation signal test,the output power of DEVM reaching-30 dB is 18.1 dBm.
power amplifiersheterojunction bipolar transistorsSiGe technology
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