首页|碳化硅衬底磨抛加工技术的研究进展与发展趋势

碳化硅衬底磨抛加工技术的研究进展与发展趋势

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碳化硅衬底难加工的材料特性叠加其大尺寸化、超薄化的放大效应,给现有的加工技术带来了巨大的挑战,高效率、高质量的碳化硅衬底加工技术成了当下的研究热点.本文综述了碳化硅衬底机械磨抛加工技术和化学反应磨抛加工技术的研究进展,对比各类磨抛技术的特点,指出碳化硅衬底磨抛加工技术面临的挑战和发展趋势,以期为大尺寸碳化硅衬底的高质量、高效率、低成本加工提供新的思路和方法.
Grinding and Polishing Technology for Silicon Carbide Substrate:State-of-the-art and Prospective
The material characteristics of silicon carbide substrate,which are difficult to machine,coupled with its amplification effect of large-sized and ultra-thinned,pose a huge challenge to existing processing technologies.Consequently,the processing technology of high efficiency and high quality for silicon carbide substrate has become a current research focus.In this paper,the research progress of mechanical and chemical grinding and polishing technology for silicon carbide substrates is reviewed.The characteristics of various grinding and polishing technologies are compared.The challenge and development trend of grinding and polishing technologies of silicon carbide substrate is pointed out to provide new ideas and methods for high quality,high efficiency,and low-cost processing of large-size silicon carbide substrate.

silicon carbidesurface roughnessmechanical grinding and polishing technologychemical reac-tion grinding and polishing technologymulti-energy field assisted grinding and polishing technology

罗求发、陈杰铭、程志豪、陆静

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华侨大学 制造工程研究院,福建 厦门 361021

高性能工具全国重点实验室,福建 厦门 361021

华侨大学 脆性材料产品智能制造技术国家地方联合工程研究中心,福建 厦门 361021

碳化硅 表面粗糙度 机械磨抛技术 化学反应磨抛技术 多能场辅助磨抛技术

国家自然科学基金资助项目福建省自然科学基金资助项目中央高校基本科研业务费专项资金资助项目国家自然科学基金联合基金重点资助项目

520051902021J05060ZQN-1022U22A20198

2024

10.16339/j.cnki.hdxbzkb.2024180

湖南大学学报(自然科学版)
湖南大学

湖南大学学报(自然科学版)

CSTPCD北大核心
影响因子：0.651
ISSN：1674-2974
年,卷(期)：2024.51(4)
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