[目的]钙钛矿材料是一种发展前景良好的激光应用光学增益介质.钙钛矿激光器件实际应用的一个关键因素是实现较低的激光阈值.为解决这个问题,选用电子传输材料(PCBM)和空穴传输材料(spiro-OMeTAD)对钙钛矿(CH3 NH3 PbI3,MAPbI3)薄膜进行钝化处理,减少薄膜的缺陷密度,从而降低放大自发辐射(ASE)阈值.[方法]研究不同激发强度下MAPbI3薄膜的光致发光(PL)光谱与ASE现象,并通过与MAPbI3/PCBM和MAPbI3/spiro-OMeTAD双层薄膜对比,研究将钙钛矿材料中的缺陷进行钝化处理后对ASE现象的影响.[结果]在特征温度120 K下,MAPbI3钙钛矿薄膜易产生ASE现象,产生ASE现象的阈值约为3.67 μJ,而MAPbI3/PCBM和MAPbI3/spiro-OMeTAD双层薄膜在特征温度下,产生ASE现象的阈值更低,分别为1.9 μJ和2 μJ.[结论]MAPbI3钙钛矿薄膜在位于800 nm左右的特征峰处易产生ASE现象,而经过钝化处理后的钙钛矿薄膜在相同波长位置的特征峰处更易产生ASE现象,产生ASE现象的阈值更低,这是因为PCBM and spiro-OMeTAD这两层薄膜能有效地钝化钙钛矿薄膜内的缺陷,使得薄膜的缺陷态密度降低,从而能有效降低ASE阈值.
Study on the Optical Properties of Perovskite Films and the Amplified Spontaneous Emission Effect After Passivation Treatment
[Purposes]Perovskite materials have emerged as a promising optical gain medium for laser ap-plications,and one crucial factor for the practical use of perovskite laser devices is achieving a lower la-ser threshold.To address this,we have explored the use of electron transport materials(PCBM)and hole transport materials(spiro-OMeTAD)to passivate the perovskite film.This approach aims to reduce the defect density of the perovskite(CH3 NH3 PbI3,MAPbI3)film and consequently lower the threshold for am-plified spontaneous emission.[Methods]This paper investigates the photoluminescence(PL)spectra and ASE phenomenon of MAPbI3 thin films under varying excitation intensities,as well as to examine the impact of defect passivation in perovskite material on the ASE phenomenon.This will be done by compar-ing the ASE phenomenon in MAPbI3/PCBM and MAPbI3/spiro-OMeTAD bilayer films.[Findings]The MAPbI3 perovskite thin film exhibits ASE phenomenon at a characteristic temperature of 120 K.The threshold for ASE generation is approximately 3.67 μJ.However,the threshold for ASE generation is even lower for MAPbI3/PCBM and MAPbI3/spiro-OMeTAD bilayer thin films,which are 1.9 μJ and 2 μJ,respec-tively,at the same characteristic temperature.[Conclusions]The MAPbI3 perovskite film exhibits ASE phenomenon at the characterstic peak around 800 nm.Similarly,the perovskite film after passivation treat-ment is also prone to ASE phenomenon at the same wavelength position,but with a lower threshold.This can be attributed to the effective defect passivation by the PCBM and spiro-OMeTAD within the perovskite film.Consequently,the density of defective states in the film decreases,leading to a lower ASE threshold.
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