Low Temperature Preparation Process of N-nc-Si:H and Its Application in Flexible Perovskite Solar Cells
[Purposes]In order to prepare a high-performance electron transport layer suitable for flexible perovskite solar cells under low-temperature technology,it is necessary to study the materials and prepa-ration conditions of the electron transport layer.[Methods]The effect of substrate temperature on the per-formance of the n-type hydrogenated nanocrystalline silicon thin film which was used as the flexible perovskite solar cell electron transport layer was studied,and the interface treatment process and struc-ture between the electron transport layer and the perovskite layer were optimized.[Findings]The low-temperature preparation conditions for n-type hydrogenated nanocrystalline silicon thin films suitable for the electronic transport layer of flexible perovskite solar cells were obtained,including dark conductivity,light transmittance,and surface morphology.With interface optimization,the conversion efficiency of the flexible perovskite solar cell reached 14.66%.[Conclusions]The preparation of high-performance elec-tron transport layers and flexible perovskite solar cells under low-temperature technology were obtained,which has guidance significance for further research on stacked perovskite solar cells.
flexible perovskite solar cellsn-type hydrogenated nanocrystalline siliconsubstrate tem-peraturethin film propertiesinterface optimization
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