超宽禁带半导体氧化镓材料的专利分析
Patent Analysis of Ultra-wide Band Gap Semiconductor Gallium Oxide Material
崔颜军 1闫春光 2宁平凡 1牛萍娟 1李明佳 3孟宇陆 3李雄杰3
作者信息
- 1. 天津工业大学电子与信息工程学院,天津 300387;大功率半导体照明应用系统教育部工程研究中心,天津 300387
- 2. 天津光电星球科技发展有限公司,天津 300111
- 3. 天津工业大学电子与信息工程学院,天津 300387
- 折叠
摘要
[目的]氧化镓是一种超宽禁带半导体,具有耐高压、耐高温、功率大、抗辐照等特性,极有可能在未来成为高功率、大电压应用领域的主导者,在全球科研与产业界引起了广泛重视.从专利角度对氧化镓材料进行分析,为相关产业的发展和专利布局提供参考.[方法]基于全球相关专利数据,从专利申请趋势、专利权人排名、技术来源国、技术领域IPC分类等维度对氧化镓材料进行分析.[结果]揭示了氧化镓在不同国家/地区的竞争态势、技术实力及我国与国际先进水平的差距.[结论]氧化镓材料的研究主要集中在半导体器件及晶体生长方面,国内相关研究起步晚,但发展迅速.
Abstract
[Purposes]Gallium oxide,which is an ultra-wide bandgap semiconductor,is expected tobe-come the main force in the applications of high-power,high voltage field in the future,with the characteris-tics of high voltage resistance,high temperature resistance,high power,radiation resistance,etc.And it has attracted extensive attention in the global scientific research and industry.This paper analyzes gallium ox-ide materials from a patent perspective to provide reference for the development of related industries and patent layout.[Methods]Based on the global patent data,the gallium oxide materials were analyzed from the perspectives of patent application trend,patentee ranking,technology source country,and IPC classifi-cation in the technical field.[Findings]The research reveals the competition situation and technical strength of different countries/regions of Gallium oxide,as well as the gap between China and the interna-tional advanced level.[Conclusions]The research on gallium oxide materials mainly focuses on semicon-ductor devices and crystal growth.Although the domestic research started late,it has developed rapidly.
关键词
超宽禁带半导体/专利分析/氧化镓/技术发展/晶体生长Key words
ultra-wide bandgap semiconductor/patent analysis/gallium oxide/technology development trend/crystal growth引用本文复制引用
基金项目
天津国家半导体照明工程高新技术产业化基地知识产权信息服务平台(16ZXFWGX00110)
出版年
2024
NETL
NSTL
万方数据