Patent Analysis of Ultra-wide Band Gap Semiconductor Gallium Oxide Material
[Purposes]Gallium oxide,which is an ultra-wide bandgap semiconductor,is expected tobe-come the main force in the applications of high-power,high voltage field in the future,with the characteris-tics of high voltage resistance,high temperature resistance,high power,radiation resistance,etc.And it has attracted extensive attention in the global scientific research and industry.This paper analyzes gallium ox-ide materials from a patent perspective to provide reference for the development of related industries and patent layout.[Methods]Based on the global patent data,the gallium oxide materials were analyzed from the perspectives of patent application trend,patentee ranking,technology source country,and IPC classifi-cation in the technical field.[Findings]The research reveals the competition situation and technical strength of different countries/regions of Gallium oxide,as well as the gap between China and the interna-tional advanced level.[Conclusions]The research on gallium oxide materials mainly focuses on semicon-ductor devices and crystal growth.Although the domestic research started late,it has developed rapidly.
ultra-wide bandgap semiconductorpatent analysisgallium oxidetechnology development trendcrystal growth
NETL
NSTL
万方数据
