电子自旋属性的自旋电子器件,由于其低能耗、高效率和强稳定性等特点,在磁性存储和计算技术的发展中发挥了重大作用.而如何以一种高能效、确定性和可扩展的方式对作为信息载体的磁性进行操控,这个重要问题在自旋电子学领域引起了利用电流操控磁化翻转的广泛研究.本文综述了利用自旋极化电流和纯自旋流操控磁化翻转的研究背景、重要工作和最新进展,详细介绍了自旋转移矩(spin transfer torque,STT)和自旋轨道矩(spin-orbit torque,SOT)的产生和作用机制,重点阐述了利用SOT驱动磁畴壁运动和垂直磁化翻转,以及无外磁场磁化翻转的原理.最后探讨了SOT在人工合成反铁磁(synthetic antiferromagnet,SAF)结构中驱动的磁化翻转,为人工合成反铁磁体作为磁性随机访问存储器(magnetic random access memory,MRAM)的应用提供了重要基础,同时也为纯电流操控的自旋电子存储器件相关研究提供了有价值的参考.
Pure Current Manipulation of Magnetization Switching in Novel Spintronic Devices
Spintronic devices utilizing the spin of electrons have played a significant role in the development of magnetic storage and computing technology due to their low energy consumption,high efficiency,and strong stability.However,how to manipulate magnetism serving as the carrier for information storage in a highly energy-efficient,deterministic,and scalable way remains an important issue,which has sparked extensive research in how to use electric current to manipulate magnetism in the field of spintronics.This article reviews the research background,important work,and latest progress of utilizing spin-polarized current and pure spin current to manipulate magnetization switching.It provides a detailed introduction to the generation and mechanism of spin transfer torque(STT)and spin-orbit torque(SOT),with a focus on the principles of SOT-driven magnetic domain wall motion and perpendicular magnetization switching,as well as magnetic-field-free magnetization switching.Finally,the magnetization switching driven by SOT in synthetic antiferromagnetic(SAF)structure was discussed,providing an important foundation for the application of SAF as magnetic random access memory(MRAM)and valuable reference for the research on pure current controlled spintronic storage devices.
spintronic devicesmagnetization switchingspin transfer torquespin-orbit torquesynthetic antiferromagnet
NETL
NSTL
万方数据
