Resarch of Dissociation in the Growth of Indium Phosphide Crystals
Indium phosphide(InP)is highly susceptible to dissociation at high temperatures,and inhibiting its dissociation has become a fundamental requirement for the growth of InP crystals.The relationship between process conditions and crystal dissociation during the synthesis of InP polycrystals by the HGF method as well as the growth of single crystals by the VGF method was experimentally investigated.Experimental results indicate that HGF should maintain the temperature of the phosphorus zone of the synthesizing furnace at 575 ℃.The polycrystalline cooling growth time is 120 hours,and the particle size of red phosphorus required for the synthesis should be 10～15 mm,with an average density of more than 2.0 g/cm3 and an obvious metallic luster on the surface.This facilitates the growth of non-dissociated,well-crystallized polycrystals.Too large a temperature gradient in the thermal field causes incomplete crystal growth and dissociation by rapid crystallization during the rapid cooling phase.
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