首页|氧等离子体处理与物理吸附相结合的聚二甲基硅氧烷表面改性

氧等离子体处理与物理吸附相结合的聚二甲基硅氧烷表面改性

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聚二甲基硅氧烷(PDMS)适用于空间细胞培养芯片的制作,为促进细胞在PDMS表面的黏附,需对其进行高稳定性的亲水改性.本文基于氧等离子体处理和物理吸附相结合的方法对PDMS实施改性.氧等离子体处理PDMS后,继续分别在表面吸附多聚赖氨酸或胶原蛋白Ⅰ型.针对不同改性溶液浓度及保存条件的聚赖氨酸-氧等离子体处理(PLL-ox-)和胶原蛋白-氧等离子体处理(COL-ox-)PDMS表面,测量其接触角及表面自由能,并用原子力显微镜观测表面形貌及粗糙度.对比了细胞在改性前后PDMS表面的生长状况,并检测培养1~3 d的活细胞数量.实验结果表明:较高改性溶液浓度及低温保存更利于亲水性维持,4℃保存PLL-ox-PDMS和COL-ox-PDMS的接触角分别在25 d和14 d时仍接近60°和65°,细胞在两种改性表面均能较好地黏附和增殖、生长10 d仍未见脱落.该处理方法尤其适用于中长期空间细胞培养等不能在表面处理后马上接种细胞,且需要细胞较长期生长于基底的应用场景.
Poly(dimethyl siloxane)surface modification based on oxygen plasma treatment and physical adsorption
Poly(dimethyl siloxane)(PDMS)is suitable for the fabrication of space cell culture chips.It is necessary to perform highly stable hydrophilic modification to promote cell adhesion on PDMS surface.We modified PDMS surface by oxygen plasma treatment combining with physical adsorption in this article.PDMS,which was treated with oxygen plasma and sequentially coated with Poly-L-lysine or collagen(PLL-ox-PDMS,COL-ox-PDMS)with various solution concentration and kept in different environmental conditions,were characterized by contact angle and surface energy measurements,and atomic force microscopy(AFM).Cell growth conditions on bare PDMS and modified PDMS were compared,and the numbers of live cells cultured for 1-3 days were evaluated.Experimental results indicate that higher solution concentration and low storage temperature benefit the hydrophilicity stability.The contact angles of PLL-ox-PDMS stored in 4℃and COL-ox-PDMS were close to 60°and 65°on day 25 and 14,respectively.Both modified PDMS surfaces are suitable for cell adhesion and proliferation,and no cell layer falls offin 10 days.The modification method is especially suitable for applications such as medium and long term space cell culture.

poly(dimethyl siloxane)surface modificationoxygen plasma treatmentphysical adsorption

施镠佳、谭映军、王春艳、聂捷琳、顾寅、巩陶婉、许梓、杨成佳、王博、丁柏、曲丽娜、李莹辉

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中国航天员科研训练中心,北京 100094

聚二甲基硅氧烷 表面改性 氧等离子体处理 物理吸附

2024

航天医学与医学工程
中国航天员科研训练中心

航天医学与医学工程

影响因子:0.392
ISSN:1002-0837
年,卷(期):2024.35(6)