Fabrication of GaN-based Micro-LED Green Micro-display with High Brightness
Micro-LEDs are a new display technology with advantages including high contrast,fast response,and long lifetimes.Micro-LEDs are currently regarded as an active topic of research.Micro-LED display technology is a promising industry,but its commercialization faces many technical challenges and bottlenecks.This study explores the diode preparation process and related technologies for high-brightness,green-light,GaN-based micro-LED micro-displays.Monochrome green micro-LEDs with resolutions of 800×480 and 0.41 in were fabricated based on the CMOS driver circuit of an all-digital signal circuit.The CMOS driver circuit was connected to an LED chip via high-precision flip bonding.The experimental results showed that the turn-on voltage of the LED was 2.8 V and that the peak wavelength of the electroluminescence spectrum was 524 nm.The maximum brightness of the device can reach 250,000 cd/m2 within the normal driving range of silicon-based CMOS circuits,and the brightness can reach 108,000 cd/m2 at 5 V.When the current density was controlled at 0.61 A/cm2,the CIE coordinates were(0.175,0.756).When the current density was increased from 0.3 A/cm2 to 1.3 A/cm2,the CIE coordinates changed from(0.178,0.757)to(0.175,0.746).The color stability of the device met the requirements for practical applications.
micro-LEDmicro-displayhigh brightness green emitting diode
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