Study on HgCdTe detectors with high operating temperature by junction formation simulator
An important branch of the three-generation infrared focal plane is high operating temperature(HOT)infra-red detector.For HgCdTe n-on-p detectors,dark current can be suppressed with n+-n--p structure and good passivation,and then better performance of the detector will be obtained under high operating temperature.Based on the junction for-mation simulator,the junction formation parameters of HOT device are achieved and combined with the manufacture technology of optimized passivation layer,HgCdTe n-on-p infrared focal plane arrays which can operate at higher tem-perature was made in Shanghai Institute of Technical Physics(SITP).The performance of HgCdTe n-on-p infrared focal plane arrays was studied at high operating temperature.One of mid-infrared detector has reached good performance un-der different operating temperature.The NETD is 6.10mK and operability is 99.96%at 80K,and the NETD is 11.0mK and operability is 99.50%at 150K,which reached the theoretical limit.
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