An improved method for determination of extrinsic resistances for HEMT devices based on 110 GHz S-parameters on-wafer measurement
An improved method for determination of extrinsic resistances for 70 nm InP high electron mobility transistor(HEMT)is proposed in this paper.A set of expressions have been derived from the equivalent circuit model under operating bias points(Vgs＞Vth,Vds = 0 V).The extrinsic resistances are iterative determined using the discrepancy between simulated and measured S-parameters as an optimization criterion using the semi-analyti-cal method.Good agreement between simulated and measured S-parameters under multi bias over the frequency range up to 110 GHz verifies the effectiveness of this extraction method.
InP high electron mobility transistor(HEMT)equivalent circuit modelextrinsic resistancesmodeling
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