首页|电流增益截止频率为441 GHz的InGaAs/InAlAs InP HEMT

电流增益截止频率为441 GHz的InGaAs/InAlAs InP HEMT

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本文设计并制作了fT>400 GHz的In0.53Ga0.47As/In0.52Al0.48As 铟磷高电子迁移率晶体管(InP HEMT).采用窄栅槽技术优化了寄生电阻.器件栅长为54.4 nm,栅宽为2×50 μm.最大漏极电流IDS.max为957 mA/mm,最大跨导gm.max为1 265 mS/mm.即使在相对较小的VDS=0.7 V下,电流增益截止频率fT达到了441 GHz,最大振荡频率fmax达到了299 GHz.该器件可应用于太赫兹单片集成放大器和其他电路中.
InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz
In this letter,an In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fT>400 GHz was designed and fabri-cated successfully.A narrow gate recess technology was used to optimize the parasitic resistances.The gate length is 54.4 nm,and the gate width is 2×50 μm.The maximum drain current IDS.max is 957 mA/mm,and the maximum transconductance gm.max is 1 265 mS/mm.The current gain cutoff frequency fT is as high as 441 GHz and the maximum oscillation frequency fmax reaches 299 GHz,even at a relatively small value of VDS=0.7 V.The re-ported device can be applied to terahertz monolithic integrated amplifiers and other circuits.

InP HEMTsInGaAs/InAlAscurrent gain cutoff frequency(fT)maximum oscillation frequency(fmax)gate recess

封瑞泽、曹书睿、冯识谕、周福贵、刘同、苏永波、金智

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中国科学院微电子研究所,高频高压器件与集成电路研究中心,北京 100029

中国科学院大学集成电路学院,北京 100049

铟磷高电子迁移率晶体管(InP HEMTs) InGaAs/InAlAs 电流增益截止频率(fT) 最大振荡频率(fmax) 栅槽

National Natural Science Foundation of China

61434006

2024

10.11972/j.issn.1001-9014.2024.03.006

红外与毫米波学报
中国光学学会 中国科学院上海技术物理所

红外与毫米波学报

CSTPCD北大核心
影响因子：0.612
ISSN：1001-9014
年,卷(期)：2024.43(3)
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