首页|1 280×1 024元InAs/GaSb Ⅱ类超晶格中/中波双色红外焦平面探测器

1 280×1 024元InAs/GaSb Ⅱ类超晶格中/中波双色红外焦平面探测器

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本文报道了1 280×1 024元InAs/GaSb Ⅱ 类超晶格中/中波双色红外焦平面阵列探测器的研究结果.探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式.运用分子束外延技术在GaSb 衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb.焦平面阵列像元中心距为12 μm.在80 K 时测试,器件双波段的工作谱段为中波1:3~4 μm,中波2:3.8~5.2 μm.中波1器件平均峰值探测率达到6.32×1011 cm·Hz1/2W-1,中波2器件平均峰值探测率达到2.84×1011 cm·Hz1/2W-1.红外焦平面偏压调节成像测试得到清晰的双波段成像.本文是国内首次报道1 280×1 024规模InAs/GaSb Ⅱ类超晶格中/中波双色红外焦平面探测器.
1 280×1 024 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays
In this paper,we report research results of 1 280×1 024 dual-color mid-wavelength infrared InAs/GaSb super-lattice focal plane arrays.The detector structure is PN-NP epitaxial multilayer and the signal is read out by sequential mode.The superlattice structure was grown on GaSb substrate using molecular beam epitaxy(MBE)technology.The respective structures of each absorption region are Mid-Wavelength 1(MW1):6 ML(InAs)/7 ML(GaSb)and Mid-Wavelength 2(MW2):9 ML(InAs)/7 ML(GaSb).The pixel center distance of the detector is 12 μm.At 80 K mea-surements,the detector has spectral response wavelength of 3-4 μm and 3.8-5.2 μm respectively.The MW1 detector has a peak detectivity of 6.32×1011 cm·Hz1/2W-1.The MW2 detector has a peak detectivity of 2.84×1011 cm·Hz1/2W-1.In-frared images of both wavebands have been taken using infrared imaging test by adjusting the device voltage bias.It's the first time that a 1 280×1 024 InAs/GaSb Type Ⅱ superlattice mid-wave length two-color infrared focal plane detec-tor has been reported in China.

focal plane arrayInAs/GaSbsuperlatticedual-color

白治中、黄敏、徐志成、周易、梁钊铭、姚华城、陈洪雷、丁瑞军、陈建新

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中国科学院上海技术物理研究所,上海 200083

焦平面 InAs/GaSb 超晶格 双色

国家自然科学基金资助项目国家自然科学基金资助项目国家自然科学基金资助项目国家自然科学基金资助项目国家重点研发计划项目上海市启明星培育项目扬帆专项上海市启明星培育项目扬帆专项中国科学院上海技术物理研究所创新专项基金资助项目

620042056210423662104237622224122022YFB360680021YF145500022YF1455800CX-455

2024

红外与毫米波学报
中国光学学会 中国科学院上海技术物理所

红外与毫米波学报

CSTPCD北大核心
影响因子:0.612
ISSN:1001-9014
年,卷(期):2024.43(4)