首页|基于InAs/GaAsSb超晶格的中红外波导探测器结构设计

基于InAs/GaAsSb超晶格的中红外波导探测器结构设计

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  • 国家科技期刊平台
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在近红外领域,已经利用片上波导和谐振器实现了分子的光谱检测.然而在中红外波段,许多传感器仍使用芯片外光源和探测器,这限制了化学传感芯片的集成度和灵敏度.本文设计了一种 InAs/GaAsSb 超晶格中红外波导集成探测器,采用 GaAsSb 作为中红外波导,波导层和 InAs/GaAsSb 超晶格吸收层之间采用倏逝波耦合方式,可以实现低损耗和高响应度的中红外光探测.对器件的光电特性进行了模拟,着重分析了InAs/GaAsSb 超晶格光电探测器与 GaAsSb 波导集成的影响因素,得到了吸收区的最优厚度和长度.当吸收区的厚度为0.3 μm、长度为50 μm时,噪声等效功率最低,量子效率可以达到68.9%.基于Ⅲ-Ⅴ族材料的波导探测器更容易集成中红外光源,实现中红外的片上集成光电检测芯片.
Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice
In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and high-quality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs-Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay-er are determined.When the absorption layer has a thickness of 0.3 μm and a length of 50 μm,the noise equiva-lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra-red light sources and achieving photoelectric detection chips.

InAs/GaAsSb superlatticewaveguide detectorevanescent couplingGaAsSb waveguide

裴金狄、柴旭良、王昱彭、周易

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国科大杭州高等研究院 物理与光电工程学院,浙江 杭州 310024

中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,上海 200083

InAs/GaAsSb 超晶格 波导探测器 倏逝波耦合 GaAsSb 波导

National Natural Science Foundation of China(NSFC)National Natural Science Foundation of China(NSFC)National Natural Science Foundation of China(NSFC)National Natural Science Foundation of China(NSFC)Youth Innovation Promotion Association of the Chinese Academy of SciencesShanghai Science and Technology Committee Rising-Star ProgramShanghai Sail Plans

61904183619741526210423762004205Y20205720QA141050021YF1455000

2024

10.11972/j.issn.1001-9014.2024.04.004

红外与毫米波学报
中国光学学会 中国科学院上海技术物理所

红外与毫米波学报

CSTPCD北大核心
影响因子：0.612
ISSN：1001-9014
年,卷(期)：2024.43(4)
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