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宽波段响应硅雪崩光电探测器研究

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本文基于目前对宽波段探测器的应用需求,设计了一种在250~1 100 nm范围有较高响应的硅雪崩光电探测器(Si APD),不需要拼接即可实现紫外-可见-近红外波段光的高效探测.分别对硅的紫外增强和(近)红外增强进行了分析,在此基础上,为获得宽波段响应Si APD,对器件结构进行模拟设计,采用光背入射等方式,提高短波吸收,同时保证近红外吸收.模拟优化的Si APD器件峰值波长940 nm左右,在250 nm和1 100 nm处响应光电流均超过峰值的15%,这种结构的器件适用于多光谱及未来高精度探测等应用领域.
Research on silicon avalanche photodetector with wideband response
Based on the current application requirements for wideband response photodetectors,we designed a novel silicon avalanche photodetector(Si APD)with high response in a broad spectral range of 250-1 100 nm and it could achieve efficient detection of ultraviolet,visible and near-infrared light without splicing.The enhancement of silicon on ultraviolet and infrared bands was separately analyzed.This was followed by simulation on the device structure de-signs using different methods such as back incidence,to improve short wavelength absorption while maintaining a high infrared absorption.The Si APD shows a peak wavelength at around 940 nm and a high photoresponse at 250 nm and 1 100 nm which exceeds 15%of the peak responsivity.This type of device is suitable for multispectral applications and future high-precision detection.

silicon avalanche photodetectorwideband responseultraviolet enhancementnear-infrared enhancement

彭红玲、卫家奇、宋春旭、王天财、曹澎、陈剑、邓杰、ZHUANG Qian-Dong、郑婉华

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中国科学院半导体研究所 固态光电信息技术实验室,北京 100083

中国科学院大学 电子与通信工程学院,北京 101408

西南技术物理研究所,四川 成都 610041

Physics Department,Lancaster University,Lancaster LA1 4YB,UK

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硅雪崩光电探测器 宽波段响应探测器 紫外增强 近红外增强

国家重点研发计划

2018YFE0200900

2024

红外与毫米波学报
中国光学学会 中国科学院上海技术物理所

红外与毫米波学报

CSTPCD北大核心
影响因子:0.612
ISSN:1001-9014
年,卷(期):2024.43(4)
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